absolute maximum ratings parameter units i d @ v gs = 10v, t c = 25c continuous drain current 1.25 i d @ v gs = 10v, t c = 100c continuous drain current 0.80 i dm pulsed drain current 5.5 p d @ t c = 25c max. power dissipation 15 w linear derating factor 0.12 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy 34 mj i ar avalanche current 1.25 a e ar repetitive avalanche energy 1.5 mj dv/dt peak diode recovery dv/dt 2.8 v/ns t j operating junction -55 to 150 t stg storage temperature range c pckg. mounting surface temp. 300 (for 5 s) weight 0.42 (typical) g the leadless chip carrier (lcc) package represents the logical next step in the continual evolution of surface mount technology. desinged to be a close replacement for the to-39 package, the lcc will give designers the extra flexibility they need to increase circuit board density. international rectifier has engineered the lcc package to meet the specific needs of the power market by increasing the size of the bottom source pad, thereby enhancing the thermal and electrical performance. the lid of the package is grounded to the source to reduce rf interference. a www.irf.com 1 lcc-18 product summary part number b vdss r ds(on) i d IRFE310 400v 3.6 ? 1.25a features: surface mount small footprint alternative to to-39 package hermetically sealed dynamic dv/dt rating avalanche energy rating simple drive requirements light weight for footnotes refer to the last page repetitive avalanche and dv/dt rated jantx2n6786u hexfet ? transistors jantxv2n6786u surface mount (lcc-18) ref:mil-prf-19500/556 IRFE310 400v, n-channel esd rating: class 1a per mil-std-750, method 1020 pd-91782c
IRFE310, jantx2n6786u 2 www.irf.com thermal resistance parameter min typ max units test conditions r thjc junction to case ? ? 8.3 r thj-pcb junction to pc board ? ? 27 soldered to a copper clad pc board c/w source-drain diode ratings and characteristics parameter min typ max units test conditions i s continuous source current (body diode) ? ? 1.25 i sm pulse source current (body diode) ? ? 5.5 v sd diode forward voltage ? ? 1.4 v t j = 25c, i s =1.25a, v gs = 0v t rr reverse recovery time ? ? 540 ns t j = 25c, i f =1.25a, di/dt 100a/ s q rr reverse recovery charge ? ? 4.5 c v dd 50v t on forward turn-on time intrinsic turn-on time is negligible. turn-on speed is substantially controlled by l s + l d . a for footnotes refer to the last page electrical characteristics @ tj = 25c (unless otherwise specified) parameter min typ max units test conditions bv dss drain-to-source breakdown voltage 400 ? ? v v gs = 0v, i d = 1.0ma ? bv dss / ? t j temperature coefficient of breakdown ? 0.37 ? v/c reference to 25c, i d = 1.0ma voltage r ds(on) static drain-to-source on-state ? ? 3.6 v gs = 10v, i d = 0.8a resistance ? ? 3.7 v gs =10v, i d =1.25a v gs(th) gate threshold voltage 2.0 ? 4.0 v v ds = v gs , i d = 250a g fs forward transconductance 0.87 ? ? s v ds = 15v, i ds = 0.8a i dss zero gate voltage drain current ? ? 25 v ds = 320v, v gs = 0v ? ? 250 v ds = 320v v gs = 0v, t j = 125c i gss gate-to-source leakage forward ? ? 100 v gs = 20v i gss gate-to-source leakage reverse ? ? -100 v gs = -20v q g total gate charge ? ? 8.4 v gs =10v, id =1.25a q gs gate-to-source charge ? ? 1.6 nc v ds = 200v q gd gate-to-drain (?miller?) charge ? ? 5.0 t d (on) turn-on delay time ? ? 15 v dd = 200v, i d = 1.25a, t r rise time ? ? 20 v gs =10v, r g = 7.5 ? t d (off) turn-off delay time ? ? 35 t f fall time ? ? 30 l s + l d total inductance ? 6.1 ? c iss input capacitance ? 190 v gs = 0v, v ds = 25v c oss output capacitance ? 65 ? pf f = 1.0mhz c rss reverse transfer capacitance ? 24 ? na nh ns a ? measured from the center of drain pad to center of source pad note: corresponding spice and saber models are available on international rectifier web site.
www.irf.com 3 IRFE310, jantx2n6786u fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 0.01 0.1 1 10 0.1 1 10 100 20s pulse width t = 25 c j top bottom vgs 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v 4.5v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 4.5v 0.01 0.1 1 10 0.1 1 10 100 20s pulse width t = 150 c j top bottom vgs 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v 4.5v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 4.5v 0.1 1 10 4.0 5.0 6.0 7.0 8.0 v = 50v 20s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 25 c j t = 150 c j -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 3.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 1.2a
IRFE310, jantx2n6786u 4 www.irf.com fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 0 2 4 6 8 10 12 0 5 10 15 20 q , total gate charge (nc) v , gate-to-source voltage (v) g gs for test circuit see figure i = d 13 1.25 a v = 80v ds v = 200v ds v = 320v ds 0.1 1 10 0.4 0.6 0.8 1.0 1.2 1.4 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j 1 10 100 0 100 200 300 400 500 v , drain-to-source voltage (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss gs gd , ds rss gd oss ds gd c iss c oss c rss 1 10 100 1000 v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 1ms 10ms 100 s dc operation in this area limited by r ds (on)
www.irf.com 5 IRFE310, jantx2n6786u fig 10a. switching time test circuit v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms
1 0.1 % + - fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature 25 50 75 100 125 150 0.00 0.25 0.50 0.75 1.00 1.25 t , case temperature ( c) i , drain current (a) c d 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response)
IRFE310, jantx2n6786u 6 www.irf.com q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12c. maximum avalanche energy vs. drain current fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v 25 50 75 100 125 150 0 15 30 45 60 75 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 0.56a 0.79a 1.25a
www.irf.com 7 IRFE310, jantx2n6786u footnotes: i sd 1.25a, di/dt 180a/ s, v dd 400v, t j 150c, suggested rg =7.5 ? repetitive rating; pulse width limited by maximum junction temperature. v dd = 50v, starting t j = 25c, peak i l = 1.25a, pulse width 300 s; duty cycle 2% case outline and dimensions ? lcc-18 ir world headquarters: 101 n. sepulveda blvd. el segundo, california 90245, usa tel: (310) 252-7105 ir leominster : 205 crawford st., leominster, massachusetts 01453, usa tel: (978) 534-5776 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . data and specifications subject to change without notice. 05/2015
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